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| SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION *With TO-220C package *DARLINGTON *High DC current gain *Low collector saturation voltage *Complement to type TIP125/126/127 APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP120/121/122 ABSOLUTE MAXIMUM RATINGS (Tc=25 ) SYMBOL PARAMETER TIP120 VCBO Collector-base voltage TIP121 TIP122 TIP120 VCEO Collector-emitter voltage TIP121 TIP122 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 5 8 120 65 2 150 -65~150 V A A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP120 VCEO(SUS) Collector-emitter sustaining voltage TIP121 TIP122 VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage TIP120 ICBO Collector cut-off current TIP121 TIP122 TIP120 ICEO Collector cut-off current TIP121 TIP122 IEBO hFE-1 hFE-2 Cob Emitter cut-off current DC current gain DC current gain Output capacitance IC=3A ,IB=12mA IC=5A ,IB=20mA IC=3.0A ; VCE=3V VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=3V IC=3.0A ; VCE=3V IE=0 ; VCB=10V,f=0.1MHz IC=0.1A, IB=0 CONDITIONS SYMBOL TIP120/121/122 MIN 60 80 100 TYP. MAX UNIT V 2.0 4.0 2.5 V V V 0.2 mA 0.5 mA 2 1000 1000 200 mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE TIP120/121/122 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 4 |
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